Spin Memory (previously Spin Transfer Technologies) is dedicated to solving the scaling and power problems of today’s memories. To meet these goals, Spin Memory is collaborating with world leaders to transform the semiconductor industry by offering MRAM solutions to replace on-chip SRAM, stand-alone persistent memories, and a range of other non-volatile memories. In addition, Spin Memory is developing spin-transfer torque (STT)-MRAM technologies and products that can replace SRAM (static RAM) and ultimately DRAM (dynamic RAM) in both embedded and stand-alone applications. Already, Spin Memory has developed breakthrough technologies in both magnetics and CMOS circuits and architectures that bring STT-MRAM to the next generation. The result: MRAM operating speeds matching those of SRAM cache memories or DRAM — but with far lower cost, no leakage power and without the endurance and data retention limitations of other STT-MRAM implementations. As the pre-eminent MRAM IP supplier, Spin Memory is uniquely positioned to offer the industry’s highest-performance, highest-density STT-MRAM memories.